Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
文献类型：期刊论文
| 作者 | Ye XL ; Liang S; Pan JQ
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 289期号:2页码:477-484 |
| 关键词 | bimodal size distribution metalorganic vapor phase epitaxy self-assembled quantum dots indium arsenide PHASE-EPITAXY ISLANDS INGAAS SIZE LASER |
| ISSN号 | 0022-0248 |
| 通讯作者 | liang, s, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: liangsong@red.semi.ac.cn |
| 中文摘要 | the growth of inas quantum dots on vicinal gaas (100) substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (mocvd). the dots showed a clear bimodal size distribution on vicinal substrates. the way of evolution of this bimodal size distribution was studied as a function of growth temperature, inas layer thickness and inas deposition rate. the optical properties of dots grown on vicinal substrates were also studied by photoluminescence (pl). it was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower pl line width, a longer emission wavelength, and a larger pl intensity. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10736]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Liang S,Pan JQ. Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties[J]. journal of crystal growth,2006,289(2):477-484. |
| APA | Ye XL,Liang S,&Pan JQ.(2006).Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties.journal of crystal growth,289(2),477-484. |
| MLA | Ye XL,et al."Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties".journal of crystal growth 289.2(2006):477-484. |
入库方式： OAI收割
来源：半导体研究所
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