Raman evidence for atomic correlation between the two constituent tubes in double-walled carbon nanotubes
文献类型：期刊论文
| 作者 | Tan PH
|
| 刊名 | physical review b
 |
| 出版日期 | 2006 |
| 卷号 | 73期号:11页码:art.no.115430 |
| 关键词 | DIAMETER DISTRIBUTION D-BAND SCATTERING SPECTROSCOPY GRAPHITE ORIGIN |
| ISSN号 | 1098-0121 |
| 通讯作者 | cheng, hm, chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. e-mail: cheng@imr.ac.cn |
| 中文摘要 | four well-resolved peaks with very narrow linewidths were found in the d-band and g'-band features of double-walled carbon nanotubes (dwnts). this fact implies the occurrence of additional van hove singularities (vhss) in the joint density of states (jdos) of dwnts, which is consistent with theoretical calculations. according to their peak frequencies and theoretical analysis, the two outer peaks can be deduced to originate from a strong coupling between the two constituent tubes of commensurate dwnts and the two inner peaks were curvature-related and assigned to originate from the two tubes with a weak coupling. this observation and elucidation constitute the first raman evidence for atomic correlation and the resulting electronic structure change of the two constituent tubes in dwnts. this result opens the possibility of predicting and modifying the electronic properties of dwnts for their electronic applications. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10750]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH. Raman evidence for atomic correlation between the two constituent tubes in double-walled carbon nanotubes[J]. physical review b,2006,73(11):art.no.115430. |
| APA | Tan PH.(2006).Raman evidence for atomic correlation between the two constituent tubes in double-walled carbon nanotubes.physical review b,73(11),art.no.115430. |
| MLA | Tan PH."Raman evidence for atomic correlation between the two constituent tubes in double-walled carbon nanotubes".physical review b 73.11(2006):art.no.115430. |
入库方式： OAI收割
来源：半导体研究所
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