中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

文献类型:期刊论文

作者Xu B
刊名solid state communications
出版日期2006
卷号137期号:11页码:630-633
关键词quantum dot molecular beam epitaxy kinetic effects Monte Carlo simulation MOLECULAR-BEAM EPITAXY PERIODIC STRAIN NUCLEATION
ISSN号0038-1098
通讯作者zhao, c, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: zhao_chang@sohu.com
中文摘要we report the growth of well-ordered inas qd chains by molecular beam epitaxy system. in order to analyze and extend the results of our experiment, a detailed kinetic monte carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of inas quantum dots (qds). we find that growth temperature plays a more important role than growth rate in the spatial ordering of the qds. we also investigate the effect of periodic stress on the shape of qds in simulation. the simulation results are in good qualitative agreement with our experiment. (c) 2006 elsevier ltd. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10758]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu B. Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate[J]. solid state communications,2006,137(11):630-633.
APA Xu B.(2006).Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate.solid state communications,137(11),630-633.
MLA Xu B."Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate".solid state communications 137.11(2006):630-633.

入库方式: OAI收割

来源:半导体研究所

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