Research on nitrogen implantation energy dependence of the properties of SIMON materials
文献类型：期刊论文
| 作者 | Zhang EX ; Sun JY ; Chen J ; Chen M ; Zhang ZX ; Li N ; Zhang GQ ; Wang X |
| 刊名 | nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
 |
| 出版日期 | 2006 |
| 卷号 | 242期号:1-2页码:585-587 |
| 关键词 | nitrogen ion implantation SIMOX implantation energy C-V measurement CHARGE OXYGEN OXIDES LAYERS |
| ISSN号 | 0168-583x |
| 通讯作者 | zhang, ex, chinese acad sci, ion beam lab, shanghai inst microsyst & informat technol, shanghai 20050, peoples r china. e-mail: yqfzhexia@mail.sim.ac.cn |
| 中文摘要 | with different implantation energies, nitrogen ions were implanted into simox wafers in our work. and then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (simon) wafers. secondary ion mass spectroscopy (sims) was used to observe the distribution of nitrogen and oxygen in the wafers. the result of electron paramagnetic resonance (epr) was suggested by the dandling bonds densities in the wafers changed with n ions implantation energies. simon-based sis capacitors were made. the results of the c-v test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10760]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang EX,Sun JY,Chen J,et al. Research on nitrogen implantation energy dependence of the properties of SIMON materials[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2006,242(1-2):585-587. |
| APA | Zhang EX.,Sun JY.,Chen J.,Chen M.,Zhang ZX.,...&Wang X.(2006).Research on nitrogen implantation energy dependence of the properties of SIMON materials.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,242(1-2),585-587. |
| MLA | Zhang EX,et al."Research on nitrogen implantation energy dependence of the properties of SIMON materials".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 242.1-2(2006):585-587. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。