Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process
文献类型:期刊论文
作者 | Yu LJ![]() |
刊名 | materials science and engineering b-solid state materials for advanced technology
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出版日期 | 2006 |
卷号 | 128期号:1-3页码:93-97 |
关键词 | surface micro-roughness contact angle root-mean-square roughness SILICON-WAFERS ROUGHNESS INP |
ISSN号 | 0921-5107 |
通讯作者 | zhao, hq, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: zhggeneral@red.semi.ac.cn |
中文摘要 | surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. in this study, inp wafers are divided into four groups and treated by different chemical processes. subsequently, the characteristics of the treated inp surfaces are carefully studied by x-ray photoelectron spectroscopy (xps), atomic force microscopy (afm), and contact angle measurements. the optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. this optimization is later evaluated by a scanning electronic microscope (sem), and the ridge waveguide 1.55 mu m si-based inp/ingaasp multi-quantum-well laser chips are also fabricated. (c) 2005 elsevier b.v. all rights reserved. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
源URL | [http://ir.semi.ac.cn/handle/172111/10762] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yu LJ. Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process[J]. materials science and engineering b-solid state materials for advanced technology,2006,128(1-3):93-97. |
APA | Yu LJ.(2006).Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process.materials science and engineering b-solid state materials for advanced technology,128(1-3),93-97. |
MLA | Yu LJ."Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process".materials science and engineering b-solid state materials for advanced technology 128.1-3(2006):93-97. |
入库方式: OAI收割
来源:半导体研究所
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