中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process

文献类型:期刊论文

作者Yu LJ
刊名materials science and engineering b-solid state materials for advanced technology
出版日期2006
卷号128期号:1-3页码:93-97
关键词surface micro-roughness contact angle root-mean-square roughness SILICON-WAFERS ROUGHNESS INP
ISSN号0921-5107
通讯作者zhao, hq, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: zhggeneral@red.semi.ac.cn
中文摘要surface micro-roughness, surface chemical properties, and surface wettability are three important aspects of wafer surfaces during a wafer cleaning process, which determine the bonding quality of ordinary direct wafer bonding. in this study, inp wafers are divided into four groups and treated by different chemical processes. subsequently, the characteristics of the treated inp surfaces are carefully studied by x-ray photoelectron spectroscopy (xps), atomic force microscopy (afm), and contact angle measurements. the optimal wafer treatment method for wafer bonding is determined by comparing the results of the processes as a whole. this optimization is later evaluated by a scanning electronic microscope (sem), and the ridge waveguide 1.55 mu m si-based inp/ingaasp multi-quantum-well laser chips are also fabricated. (c) 2005 elsevier b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10762]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yu LJ. Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process[J]. materials science and engineering b-solid state materials for advanced technology,2006,128(1-3):93-97.
APA Yu LJ.(2006).Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process.materials science and engineering b-solid state materials for advanced technology,128(1-3),93-97.
MLA Yu LJ."Investigation of a chemically treated InP(100) surface during hydrophilic wafer bonding process".materials science and engineering b-solid state materials for advanced technology 128.1-3(2006):93-97.

入库方式: OAI收割

来源:半导体研究所

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