Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Jiang DS ; Li XY; Zhu JJ; Yang H; Zhao DG; Yang H
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 289期号:1页码:72-75 |
| 关键词 | growth rate parasitic reaction MOCVD AlN GAS-PHASE REACTIONS MOVPE GROWTH ALGAN MOVPE ALXGA1-XN |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: dgzhao@red.semi.ac.cn |
| 中文摘要 | the al composition of metalorganic chemical vapor deposition (mocvd)-grown algan alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (nh3) and trimethylaluminum (tmai). the growth process of aln is carefully investigated by monitoring the in situ optical reflection. the abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of nh3 are observed and can be well explained by the effect of parasitic reaction. the increase of growth rate with increasing flux of tmai is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. a relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the mocvd growth of aln and probably lead to a more effective incorporation of al into the algan layers. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10778]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS,Li XY,Zhu JJ,et al. Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition[J]. journal of crystal growth,2006,289(1):72-75. |
| APA | Jiang DS,Li XY,Zhu JJ,Yang H,Zhao DG,&Yang H.(2006).Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition.journal of crystal growth,289(1),72-75. |
| MLA | Jiang DS,et al."Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition".journal of crystal growth 289.1(2006):72-75. |
入库方式： OAI收割
来源：半导体研究所
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