Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires
文献类型：期刊论文
| 作者 | Gong Z ; Niu ZC ; Fang ZD |
| 刊名 | nanotechnology
 |
| 出版日期 | 2006 |
| 卷号 | 17期号:4页码:1140-1145 |
| 关键词 | MOLECULAR-BEAM EPITAXY QUANTUM-DOT SUPERLATTICES VICINAL GAAS(001) GAAS WIRES POLARIZATION GROWTH WELLS TEMPERATURE MECHANISM |
| ISSN号 | 0957-4484 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zheng.gong@strath.ac.uk ; zcniu@red.semi.ac.cn |
| 中文摘要 | morphology evolution of high-index gaas(331)a surfaces during molecular beam epitaxy (mbe) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. atomic force microscope (afm) measurements have shown that the step height and terrace width of gaas layers increase monotonically with increasing substrate temperature. by using the step arrays formed on gaas(331)a surfaces as the templates, we have fabricated highly ordered ingaas nanowires. the improved homogeneity and the increased density of the ingaas nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. photoluminescence (pl) tests confirmed remarkable polarization anisotropy. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10784]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gong Z,Niu ZC,Fang ZD. Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires[J]. nanotechnology,2006,17(4):1140-1145. |
| APA | Gong Z,Niu ZC,&Fang ZD.(2006).Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires.nanotechnology,17(4),1140-1145. |
| MLA | Gong Z,et al."Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires".nanotechnology 17.4(2006):1140-1145. |
入库方式： OAI收割
来源：半导体研究所
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