Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser
文献类型:期刊论文
| 作者 | Wang CL ; Wang YG ; Ma XY ; Liu Y ; Sun LQ ; Tian Q ; Zang ZG ; Wang QY |
| 刊名 | chinese physics letters
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| 出版日期 | 2006 |
| 卷号 | 23期号:3页码:616-618 |
| 关键词 | SATURABLE ABSORBER MIRROR |
| ISSN号 | 0256-307x |
| 通讯作者 | wang, cl, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: chinawygxjw@yahoo.com.cn |
| 中文摘要 | we have demonstrated passive mode-locking in a diode-end-pumped nd:yvo4 laser using two kinds of semiconductor absorbers whose relaxation region comes from in0.25ga0.75as grown at low temperature (lt) and gaas/air interface respectively mode-locking, using absorbers of the gaas/air interface relaxation region, has the characteristics of less q-switching tendency and higher average output power than that using absorbers of lt in0.25ga0.75as relaxation region, but is not as stable as the latter. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10788] ![]() |
| 专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
| 推荐引用方式 GB/T 7714 | Wang CL,Wang YG,Ma XY,et al. Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser[J]. chinese physics letters,2006,23(3):616-618. |
| APA | Wang CL.,Wang YG.,Ma XY.,Liu Y.,Sun LQ.,...&Wang QY.(2006).Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser.chinese physics letters,23(3),616-618. |
| MLA | Wang CL,et al."Comparison between two kinds of semiconductor absorbers for mode-locking in Nd : YVO4 laser".chinese physics letters 23.3(2006):616-618. |
入库方式: OAI收割
来源:半导体研究所
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