Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m
文献类型：期刊论文
| 作者 | Shi WH ; Mao RW ; Zhao L ; Luo LP ; Wang QM |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:3页码:735-737 |
| 关键词 | SILICON HETEROSTRUCTURES |
| ISSN号 | 0256-307x |
| 通讯作者 | shi, wh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: whshi@red.semi.ac.cn |
| 中文摘要 | heterojunction phototransistors (hpts) with several ge/si nano-dot layers as the absorption region are fabricated to obtain improved light detectivity at 1.55 mu m. the hpt detectors are of n-p-n type with ten layers of ge(8ml)/si(45nm) incorporated in the base-collector junction and are grown by an ultrahigh-vacuum chemical-vapor deposition system. the detectors are operated with normal incidence. because of the good quality of the grown material and fabrication process, the dark current is only 0.71pa/mu m(2) under 5 v bias and the break-down voltage is over 20 v. compared to the positive-intrinsic-negative (pin) reference detector with the same absorption layer, the responsivity is improved over 17 times for normal incidence at 1.55 mu m. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10792]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi WH,Mao RW,Zhao L,et al. Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m[J]. chinese physics letters,2006,23(3):735-737. |
| APA | Shi WH,Mao RW,Zhao L,Luo LP,&Wang QM.(2006).Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m.chinese physics letters,23(3),735-737. |
| MLA | Shi WH,et al."Fabrication of Ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m".chinese physics letters 23.3(2006):735-737. |
入库方式： OAI收割
来源：半导体研究所
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