Recombination property of nitrogen-acceptor-bound states in ZnO
文献类型：期刊论文
| 作者 | Yang XD ; Xu ZY ; Sun Z ; Sun BQ ; Ding L ; Wang FZ ; Ye ZZ |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 99期号:4页码:art.no.046101 |
| 关键词 | MOLECULAR-BEAM EPITAXY P-TYPE ZNO OPTICAL-PROPERTIES EXCITON FORMATION PHOTOLUMINESCENCE FILMS SPECTROSCOPY DYNAMICS IMPURITY ENERGY |
| ISSN号 | 0021-8979 |
| 通讯作者 | yang, xd, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: young@red.semi.ac.cn |
| 中文摘要 | the recombination property of nitrogen (n)-related acceptor-bound states in zno has been investigated by photoluminescence (pl), time-resolved pl, and selective pl. several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large coulomb interaction. it is strongly suggested that bound exciton emission dominates the recombination process related to the n acceptor. the recombination lifetime is 750 ps and the binding energy is 67 mev for n-acceptor-bound exciton at low temperature. (c) 2006 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10812]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang XD,Xu ZY,Sun Z,et al. Recombination property of nitrogen-acceptor-bound states in ZnO[J]. journal of applied physics,2006,99(4):art.no.046101. |
| APA | Yang XD.,Xu ZY.,Sun Z.,Sun BQ.,Ding L.,...&Ye ZZ.(2006).Recombination property of nitrogen-acceptor-bound states in ZnO.journal of applied physics,99(4),art.no.046101. |
| MLA | Yang XD,et al."Recombination property of nitrogen-acceptor-bound states in ZnO".journal of applied physics 99.4(2006):art.no.046101. |
入库方式： OAI收割
来源：半导体研究所
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