Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films
文献类型：期刊论文
| 作者 | Han XX ; Wei HY
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:6页码:art.no.602110 |
| 关键词 | P-TYPE CONDUCTION THIN-FILMS OHMIC CONTACTS |
| ISSN号 | 0003-6951 |
| 通讯作者 | cong, gw, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: gwcong@semi.ac.cn |
| 中文摘要 | the valence band structures of al-n-codoped [zno:(al, n)] and n-doped (zno:n) zno films were studied by normal and soft x-ray photoelectron spectroscopy. the valence-band maximum of zno:(al, n) shifts up to fermi energy level by about 300 mev compared with that of zno:n. such a shift can be attributed to the existence of a kind of al-n in zno:(al, n), as supported by core level xps spectra and comparison of modified auger parameters. al-n increased the relative quantity of zn-n in zno:(al, n), while n-n decreased that of zn-n in zno:n. (c) 2006 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10816]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han XX,Wei HY. Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films[J]. applied physics letters,2006,88(6):art.no.602110. |
| APA | Han XX,&Wei HY.(2006).Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films.applied physics letters,88(6),art.no.602110. |
| MLA | Han XX,et al."Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films".applied physics letters 88.6(2006):art.no.602110. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。