Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices
文献类型：期刊论文
| 作者 | Xu B ; Ye XL; Jin P
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:6页码:art.no.063114 |
| 关键词 | VERTICAL SELF-ORGANIZATION QUANTUM WIRES SURFACE GROWTH ALLOY INALAS/INP(001) NANOWIRES INP(001) ISLANDS ARRAYS |
| ISSN号 | 0003-6951 |
| 通讯作者 | lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn |
| 中文摘要 | the control of shape and spatial correlation of inas-inalas-inp(001) nanostructure superlattices has been realized by changing the as overpressure during the molecular-beam epitaxy (mbe) growth of inas layers. inas quantum wires (qwrs) are obtained under higher as overpressure (1x10(-5) torr), while elongated inas quantum dots (qds) are formed under lower as overpressure (5x10(-6) or 2.5x10(-6) torr). correspondingly, spatial correlation changes from vertical anti-correlation in qwr superlattices to vertical correlation in qd superlattices, which is well explained by the different alloy phase separation in inalas spacer layers triggered by the inas nanostrcutures. it was observed that the alloy phase separation in qd superlattices could extend a long distance along the growth direction, indicating the vertical correlation of qd superlattices can be kept in a wide range of spacer layer thickness. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10818]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL,Jin P. Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices[J]. applied physics letters,2006,88(6):art.no.063114. |
| APA | Xu B,Ye XL,&Jin P.(2006).Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices.applied physics letters,88(6),art.no.063114. |
| MLA | Xu B,et al."Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices".applied physics letters 88.6(2006):art.no.063114. |
入库方式： OAI收割
来源：半导体研究所
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