Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters
文献类型：期刊论文
| 作者 | Hou LP ; Zhu HL ; Zhou F ; Wang BJ ; Bian J ; Wang W |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 288期号:1页码:148-152 |
| ISSN号 | 0022-0248 |
| 关键词 | asymmetric twin waveguide quantum well intermixing selective area growth electroabsorption modulator semiconductor optical amplifier spot-size converters WAVE-GUIDE |
| 通讯作者 | hou, lp, chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china. e-mail: houlp@red.semi.ac.cn |
| 中文摘要 | we have demonstrated an electroabsorption modulator (eam) and semiconductor optical amplifier (soa) monolithically integrated with novel dual-waveguide spot-size converters (sscs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. the device is fabricated by means of selective-area movpe growth (sag), quantum well intermixing (qwi) and asymmetric twin waveguide (atg) technologies with only three steps low-pressure movpe growth. for the device structure, in soa/eam section, double ridge structure was employed to reduce the eam capacitances and enable high bit-rate operation. in the ssc sections, buried ridge stripe (brs) were incorporated. such a combination of ridge, atg and brs structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of brs. at the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 db dc and more than 10 ghz 3-db bandwidth is successfully achieved. the beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 db coupling loss with cleaved single-mode optical fiber. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10824]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hou LP,Zhu HL,Zhou F,et al. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters[J]. journal of crystal growth,2006,288(1):148-152. |
| APA | Hou LP,Zhu HL,Zhou F,Wang BJ,Bian J,&Wang W.(2006).Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters.journal of crystal growth,288(1),148-152. |
| MLA | Hou LP,et al."Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters".journal of crystal growth 288.1(2006):148-152. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。