中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

文献类型:期刊论文

作者Xu YQ
刊名journal of applied physics
出版日期2006
卷号99期号:3页码:art.no.034903
关键词IMPROVED LUMINESCENCE EFFICIENCY OPTICAL-PROPERTIES LASERS NITROGEN ORIGIN
ISSN号0021-8979
通讯作者zhao, h, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: zhaohuan@red.semi.ac.cn
中文摘要effect of rapid thermal annealing on photoluminescence (pl) properties of ingaas, inganas, ingaassb, and inganassb quantum wells (qws) grown by molecular-beam epitaxy was systematically investigated. variations of pl intensity and full width at half maximum were recorded from the samples annealed at different conditions. the pl peak intensities of ingaas and inganas qws initially increase and then decrease when the annealing temperature increased from 600 to 900 degrees c, but the drawing lines of ingaassb and inganassb take on an "m" shape. the enhancement of the pl intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. in the 800-900 degrees c high-temperature region, interdiffusion is likely the main factor influencing the pl intensity. in-n is easily formed during annealing which will prevent in out diffusion, so the largest blueshift was observed in ingaassb in the high-temperature region. (c) 2006 american institute of physics.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10830]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xu YQ. Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy[J]. journal of applied physics,2006,99(3):art.no.034903.
APA Xu YQ.(2006).Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy.journal of applied physics,99(3),art.no.034903.
MLA Xu YQ."Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy".journal of applied physics 99.3(2006):art.no.034903.

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来源:半导体研究所

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