Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy
文献类型：期刊论文
| 作者 | Liu J
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2006 |
| 卷号 | 99期号:3页码:art.no.036110 |
| 关键词 | METALLIC FERROMAGNET NIMNSB POSITRON-ANNIHILATION SPIN-POLARIZATION FILMS JUNCTIONS |
| ISSN号 | 0021-8979 |
| 通讯作者 | liu, j, univ wurzburg, inst phys, d-97074 wurzburg, germany. e-mail: georg.schmidt@physik.uni-wuerzburg.de |
| 中文摘要 | we demonstrate tunnel magnetoresistance junctions based on a trilayer system consisting of an epitaxial nimnsb, an aluminum oxide, and a cofe trilayer. the junctions show a tunneling magnetoresistance of delta r/r of 8.7% at room temperature which increases to 14.7% at 4.2 k. the layers show a clear separate switching and a small ferromagnetic coupling. a uniaxial in-plane anisotropy in the nimnsb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications. (c) 2006 american institute of physics. |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10832]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu J. Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy[J]. journal of applied physics,2006,99(3):art.no.036110. |
| APA | Liu J.(2006).Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy.journal of applied physics,99(3),art.no.036110. |
| MLA | Liu J."Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy".journal of applied physics 99.3(2006):art.no.036110. |
入库方式： OAI收割
来源：半导体研究所
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