Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy
文献类型：期刊论文
| 作者 | Jin P
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:7页码:art.no.071903 |
| ISSN号 | 0003-6951 |
| 关键词 | GROWTH INAS GAAS SURFACES |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn |
| 中文摘要 | for the inas/gaas quantum-dot system, the evolution of the wetting layer (wl) with the inas deposition thickness has been studied by reflectance difference spectroscopy (rds) in combination with atomic force microscopy and photoluminescence. one transition related to the light hole in the wl has been observed clearly in rds, from which its transition energy and in-plane optical anisotropy (oa) are determined. the evolution of wl with the inas dot formation and ripening has been discussed. in addition, the remarkable changes in oa at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the wl and the dots. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10836]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P. Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy[J]. applied physics letters,2006,88(7):art.no.071903. |
| APA | Jin P.(2006).Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy.applied physics letters,88(7),art.no.071903. |
| MLA | Jin P."Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy".applied physics letters 88.7(2006):art.no.071903. |
入库方式： OAI收割
来源：半导体研究所
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