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A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration
文献类型：期刊论文
| 作者 | Tu XG ; Chen SW ; Zhao L ; Sun F ; Yu JZ ; Wang QM |
| 刊名 | journal of lightwave technology
 |
| 出版日期 | 2006 |
| 卷号 | 24期号:2页码:1000-1007 |
| 关键词 | electrooptic modulation metal-oxide-semiconductor (MOS) capacitors modulator plasma dispersion effect silicon-on-insulator (SOI) SILICON OPTICAL MODULATOR RIB WAVE-GUIDES THERMOOPTICAL SWITCH ON-INSULATOR SOI EFFICIENCY |
| ISSN号 | 0733-8724 |
| 通讯作者 | tu, xg, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail: tuxiaog@red.semi.ac.cn ; swchen@red.semi.ac.cn ; leizhao@red.semi.ac.cn ; sun@red.semi.ac.cn ; jzyu@red.semi.ac.cn ; qmwang@red.semi.ac.cn |
| 中文摘要 | a novel si-based metal-oxide-semiconductor (mos) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (soi) waveguide is simulated and analyzed. the refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. the theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. the influence of the structure parameters such as the width and the doping level of the active region are analyzed. a half-wave voltage v-pi = 4 v is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. when decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10846]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tu XG,Chen SW,Zhao L,et al. A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration[J]. journal of lightwave technology,2006,24(2):1000-1007. |
| APA | Tu XG,Chen SW,Zhao L,Sun F,Yu JZ,&Wang QM.(2006).A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration.journal of lightwave technology,24(2),1000-1007. |
| MLA | Tu XG,et al."A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration".journal of lightwave technology 24.2(2006):1000-1007. |
入库方式： OAI收割
来源：半导体研究所
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