Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique
文献类型：期刊论文
| 作者 | Wang MQ ; Huang YZ ; Chen Q ; Cai ZP |
| 刊名 | ieee journal of quantum electronics
 |
| 出版日期 | 2006 |
| 卷号 | 42期号:1-2页码:146-151 |
| 关键词 | cavity resonators FDTD methods laser modes nanowire cavity quality factor reflection coefficient INDIUM-PHOSPHIDE NANOWIRES PADE-APPROXIMATION LASER GAIN |
| ISSN号 | 0018-9197 |
| 通讯作者 | wang, mq, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. |
| 中文摘要 | the mode frequency and the quality factor of nanowire cavities are calculated from the intensity spectrum obtained by the finite-difference time-domain (fdtd) technique and the pade approximation. in a free-standing nanowire cavity with dielectric constant epsilon = 6.0 and a length of 5 mu m, quality factors of 130, 159, and 151 are obtained for the he11 modes with a wavelength around 375 nm, at cavity radius of 60, 75, and 90 nm, respectively. the corresponding quality factors reduce to 78, 94, and 86 for a nanowire cavity standing on a sapphire substrate with a refractive index of 1.8. the mode quality factors are also calculated for the te01 and tm01 modes, and the mode reflectivities are calculated from the mode quality factors. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10850]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang MQ,Huang YZ,Chen Q,et al. Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique[J]. ieee journal of quantum electronics,2006,42(1-2):146-151. |
| APA | Wang MQ,Huang YZ,Chen Q,&Cai ZP.(2006).Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique.ieee journal of quantum electronics,42(1-2),146-151. |
| MLA | Wang MQ,et al."Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique".ieee journal of quantum electronics 42.1-2(2006):146-151. |
入库方式： OAI收割
来源：半导体研究所
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