Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers
文献类型：期刊论文
| 作者 | Zheng YH
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:2页码:493-496 |
| 关键词 | ROOM-TEMPERATURE FERROMAGNETISM MOLECULAR-BEAM EPITAXY MULTILAYER CRAS |
| ISSN号 | 0256-307x |
| 通讯作者 | zhao, jh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. e-mail: jhzhao@red.semi.ac.cn |
| 中文摘要 | zincblende crsb (zb-crsb) layers with room-temperature ferromagnetism have been grown on relaxed and strained (in,ga)as buffer layers epitaxially prepared on (001) gaas substrates by molecular-beam epitaxy. the structural characterizations of crsb layers fabricated under the two cases are studied by using synchrotron grazing incidence x-ray diffraction (gid). the results of gid experiments indicate that no sign of second phase exists in all the zb-crsb layers. superconducting quantum interference device measurements demonstrate that the thickness of zb-crsb layers grown on both relaxed and strained (in,ga)as buffer layers can be increased to similar to 12 monolayers (similar to 3.6nm), compared to similar to 3 monolayers (similar to 1nm) on gaas directly. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10858]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng YH. Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers[J]. chinese physics letters,2006,23(2):493-496. |
| APA | Zheng YH.(2006).Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers.chinese physics letters,23(2),493-496. |
| MLA | Zheng YH."Growth and magnetic properties of zincblende CrSb epilayers on relaxed and strained (In, Ga)As buffers".chinese physics letters 23.2(2006):493-496. |
入库方式： OAI收割
来源：半导体研究所
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