Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
文献类型：期刊论文
| 作者 | Ai B ; Shen H ; Liang ZC ; Chen Z ; Kong GL ; Liao XB |
| 刊名 | thin solid films
 |
| 出版日期 | 2006 |
| 卷号 | 497期号:1-2页码:157-162 |
| 关键词 | chemical vapour deposition electrical properties and measurements scanning electron microscopy polycrystalline silicon GRAIN-BOUNDARIES STATES |
| ISSN号 | 0040-6090 |
| 通讯作者 | ai, b, sun yat sen univ, energy engn acad, inst solar energy syst, ghangzhou 510275, peoples r china. e-mail: stsab@zsu.edu.cn ; shenhui11956@163.com |
| 中文摘要 | in this paper, about 30 mu m thick b-doped polycrystalline silicon (poly-si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees c. activation energy measurement and room temperature/temperature dependent hall effect measurement were performed on the poly-si thin films prepared on the former two kinds of substrates, respectively. it seems that the electrical properties of as-prepared poly-si thin films could be qualitatively explained by seto's grain boundary (gb) trapping theory although there is a big difference between our samples and seto's in gain size and film thickness etc. the experimental results reconfirm that gb itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. electron beam induced current measurements on the poly-si thin films prepared on the poly-si ribbons also show that severe recombination occurs at the positions of gbs. (c) 2005 elsevier b.v all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10866]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ai B,Shen H,Liang ZC,et al. Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition[J]. thin solid films,2006,497(1-2):157-162. |
| APA | Ai B,Shen H,Liang ZC,Chen Z,Kong GL,&Liao XB.(2006).Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition.thin solid films,497(1-2),157-162. |
| MLA | Ai B,et al."Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition".thin solid films 497.1-2(2006):157-162. |
入库方式： OAI收割
来源：半导体研究所
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