Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate
文献类型：期刊论文
| 作者 | Jin P ; Xu B
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2006 |
| 卷号 | 31期号:1页码:43-47 |
| 关键词 | patterned substrate GaAs molecular beam epitaxy nucleation positions ASSEMBLED QUANTUM DOTS MOLECULAR-BEAM EPITAXY GE ISLANDS GROWTH SURFACE ARRAYS |
| ISSN号 | 1386-9477 |
| 通讯作者 | chen, yh, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yhchen@red.semi.ac.cn |
| 中文摘要 | by combination of prepatterned substrate and self-organized growth, inas islands are grown on the stripe-patterned gaas (100) substrate by solid soul-cc molecular beam epitaxy. four [011] stripe-patterned substrates different in pitch, depth, and sidewall angle, respectively, are used in this work. the surface morphology obtained by atomic force microscopy shows that the inas quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate. the mechanism determining the nucleation position of the inas dots is discussed. the optical properties of the inas dots on the patterned substrates are also investigated by photo luminescence. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10880]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Xu B. Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate[J]. physica e-low-dimensional systems & nanostructures,2006,31(1):43-47. |
| APA | Jin P,&Xu B.(2006).Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate.physica e-low-dimensional systems & nanostructures,31(1),43-47. |
| MLA | Jin P,et al."Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate".physica e-low-dimensional systems & nanostructures 31.1(2006):43-47. |
入库方式： OAI收割
来源：半导体研究所
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