Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)
文献类型：期刊论文
| 作者 | Yin ZG
|
| 刊名 | solid state communications
 |
| 出版日期 | 2006 |
| 卷号 | 137期号:3页码:126-128 |
| 关键词 | magnetron sputtering MnxGe1-x ferromagnetism N-TYPE GE FERROMAGNETISM SEMICONDUCTOR SPINTRONICS |
| ISSN号 | 0038-1098 |
| 通讯作者 | liu, lf, peking univ, inst microelect, novel devices grp, beijing 100871, peoples r china. e-mail: lfliu@ime.pku.edu.cn |
| 中文摘要 | we have grown mnxge1-x films (x=0, 0.06, 0.1) on si (001) substrates by magnetron cosputtering, and have explored the resulting structural, morphological, electrical and magnetic properties. x-ray diffraction results show there is no secondary phase except ge in the mn0.06ge0.94 film while new phase appears in the mn0.1ge0.9 film. nanocrystals are formed in the mn0.06ge0.94 film, determined by field-emission scanning electron microscopy. hall measurement indicates that the mn0.06ge0.94 film is p-type semiconductor and hole carrier concentration is 6.07 x 10(19) cm(-3) while the mnxge1-x films with x=0 has n-type carriers. the field dependence of magnetization was measured using alternating gradient magnetometer, and it has been indicated that the mn0.06ge0.94 film is ferromagnetic at room temperature. (c) 2005 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10886]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yin ZG. Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)[J]. solid state communications,2006,137(3):126-128. |
| APA | Yin ZG.(2006).Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001).solid state communications,137(3),126-128. |
| MLA | Yin ZG."Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)".solid state communications 137.3(2006):126-128. |
入库方式： OAI收割
来源：半导体研究所
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