Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD
文献类型：期刊论文
| 作者 | Meng T ; Zhu XF ; Wang ZG |
| 刊名 | rare metal materials and engineering
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:12页码:1849-1853 |
| 关键词 | GaN based quantum dots self-assembly S-K mode MOCVD CHEMICAL-VAPOR-DEPOSITION STRANSKI-KRASTANOV GROWTH OPTICAL-PROPERTIES ALGAN SURFACES |
| ISSN号 | 1002-185x |
| 通讯作者 | meng, t, xiamen univ, dept phys, lab low dimens nanostruct, xiamen 361005, peoples r china. e-mail: mtao@sina.com |
| 中文摘要 | in recent years, growth of gan-based materials-related quantum dots has become a hot topic in semiconductor materials research. considerable efforts have been devoted to growth of self-assembled quantum dots of gan-based materials via mocvd (metal organic chemical vapor deposition) and there are a lot of relevant literatures. there is, however, few review papers for the topic. in this paper, different experimental methods for fabrication of quantum dots of gan-based materials via mocvd are critically reviewed and the experimental conditions and parameters, which may affect growth of the quantum dots, are analyzed, with an aim at providing some critical reference for the related future experiment research. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10888]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Meng T,Zhu XF,Wang ZG. Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD[J]. rare metal materials and engineering,2005,34(12):1849-1853. |
| APA | Meng T,Zhu XF,&Wang ZG.(2005).Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD.rare metal materials and engineering,34(12),1849-1853. |
| MLA | Meng T,et al."Experiments and their analysis for self-assembly growth of GaN quantum dots via MOCVD".rare metal materials and engineering 34.12(2005):1849-1853. |
入库方式： OAI收割
来源：半导体研究所
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