Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells
文献类型:期刊论文
作者 | Sun Z ; Xu ZY ; Yang XD ; Sun BQ ; Ji Y ; Zhang SY ; Ni HQ ; Niu ZC |
刊名 | applied physics letters
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出版日期 | 2006 |
卷号 | 88期号:1页码:art.no.011912 |
关键词 | MOLECULAR-BEAM EPITAXY GAASN ALLOYS |
ISSN号 | 0003-6951 |
通讯作者 | sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: zyxu@red.semi.ac.cn |
中文摘要 | the influence of nonradiative recombination on the photoluminescence (pl) decay dynamics in gainnas/gaas quantum wells is studied by time-resolved photoluminescence under various excitation intensities. it is found that the pl decay process strongly depends on the excitation intensity. in particular, under the moderate excitation levels the pl decay curves exhibit unusual nonexponential behavior and show a convex shape. by introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. the cw pl data further demonstrate the nonradiative recombination effect on the optical properties of gainnas/gaas quantum wells. (c) 2006 american institute of physics. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-04-11 |
源URL | [http://ir.semi.ac.cn/handle/172111/10894] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Sun Z,Xu ZY,Yang XD,et al. Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells[J]. applied physics letters,2006,88(1):art.no.011912. |
APA | Sun Z.,Xu ZY.,Yang XD.,Sun BQ.,Ji Y.,...&Niu ZC.(2006).Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells.applied physics letters,88(1),art.no.011912. |
MLA | Sun Z,et al."Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells".applied physics letters 88.1(2006):art.no.011912. |
入库方式: OAI收割
来源:半导体研究所
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