中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

文献类型:期刊论文

作者Sun Z ; Xu ZY ; Yang XD ; Sun BQ ; Ji Y ; Zhang SY ; Ni HQ ; Niu ZC
刊名applied physics letters
出版日期2006
卷号88期号:1页码:art.no.011912
关键词MOLECULAR-BEAM EPITAXY GAASN ALLOYS
ISSN号0003-6951
通讯作者sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. e-mail: zyxu@red.semi.ac.cn
中文摘要the influence of nonradiative recombination on the photoluminescence (pl) decay dynamics in gainnas/gaas quantum wells is studied by time-resolved photoluminescence under various excitation intensities. it is found that the pl decay process strongly depends on the excitation intensity. in particular, under the moderate excitation levels the pl decay curves exhibit unusual nonexponential behavior and show a convex shape. by introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. the cw pl data further demonstrate the nonradiative recombination effect on the optical properties of gainnas/gaas quantum wells. (c) 2006 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-04-11
源URL[http://ir.semi.ac.cn/handle/172111/10894]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Sun Z,Xu ZY,Yang XD,et al. Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells[J]. applied physics letters,2006,88(1):art.no.011912.
APA Sun Z.,Xu ZY.,Yang XD.,Sun BQ.,Ji Y.,...&Niu ZC.(2006).Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells.applied physics letters,88(1),art.no.011912.
MLA Sun Z,et al."Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells".applied physics letters 88.1(2006):art.no.011912.

入库方式: OAI收割

来源:半导体研究所

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