Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Jin P ; Ye XL
|
| 刊名 | nanotechnology
 |
| 出版日期 | 2005 |
| 卷号 | 16期号:12页码:2775-2778 |
| 关键词 | GAAS |
| ISSN号 | 0957-4484 |
| 通讯作者 | jin, p, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: penjin@red.semi.ac.cn |
| 中文摘要 | inas was deposited by molecular beam epitaxy (mbe) on a gaas substrate with an intentional temperature gradient from centre to edge. two-dimensional (2d) to three-dimensional (3d) morphology evolution was found along the direction in which the substrate temperature was decreasing. quantum dots (qds) with density as low as similar to 8 x 10(6) cm(-2) were formed in some regions. we attribute the morphological evolution to the temperature-dependent desorption of deposited indium and the intermixing between deposited indium and gallium from the buffer. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10900]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Ye XL. Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy[J]. nanotechnology,2005,16(12):2775-2778. |
| APA | Jin P,&Ye XL.(2005).Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy.nanotechnology,16(12),2775-2778. |
| MLA | Jin P,et al."Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy".nanotechnology 16.12(2005):2775-2778. |
入库方式： OAI收割
来源：半导体研究所
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