Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures
文献类型：期刊论文
| 作者 | Jin P ; Xu B
|
| 刊名 | nanotechnology
 |
| 出版日期 | 2005 |
| 卷号 | 16期号:12页码:2785-2789 |
| 关键词 | DOT INFRARED PHOTODETECTORS INAS/GAAS QUANTUM DOTS ROOM-TEMPERATURE SPECTROSCOPY PHOTOCONDUCTIVITY HETEROSTRUCTURES TRANSITIONS LASERS WELLS INP |
| ISSN号 | 0957-4484 |
| 通讯作者 | lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ahleiwen@red.semi.ac.cn |
| 中文摘要 | the interband and intraband photocurrent properties of inas/inalas/inp nanostructures have been studied. the doping effect on the photoluminescence properties of the quantum dots and the anisotropy of the quantum wire interband photocurrent properties are presented and discussed. with the help of interband excitation, an intraband photocurrent signal of the inas nanostructures is observed. with the increase of the interband excitation power, the intraband photocurrent signal first increases and then decreases, which can be explained by the variance of the ground state occupation of the inas nanostructures and the change of the mobility and lifetime of the electrons. the temperature dependence of the intraband photocurrent signal of the inas nanostructures is also investigated. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10902]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P,Xu B. Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures[J]. nanotechnology,2005,16(12):2785-2789. |
| APA | Jin P,&Xu B.(2005).Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures.nanotechnology,16(12),2785-2789. |
| MLA | Jin P,et al."Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures".nanotechnology 16.12(2005):2785-2789. |
入库方式： OAI收割
来源：半导体研究所
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