A model for scattering due to interface roughness in finite quantum wells
文献类型：期刊论文
| 作者 | Han XX
|
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2005 |
| 卷号 | 20期号:12页码:1207-1212 |
| 关键词 | SINGLE-PARTICLE ELECTRON-GAS MOBILITY GAAS DISORDER |
| ISSN号 | 0268-1242 |
| 通讯作者 | li, jm, chinese acad sci, inst semicond, beijing 100083, peoples r china. e-mail: jiemli@red.semi.ac.cn |
| 中文摘要 | a model for scattering due to interface roughness in finite quantum wells (qws) is developed within the framework of the boltzmann transport equation and a simple and explicit expression between mobility limited by interface roughness scattering and barrier height is obtained. the main advantage of our model is that it does not involve complicated wavefunction calculations, and thus it is convenient for predicting the mobility in thin finite qws. it is found that the mobility limited by interface roughness is one order of amplitude higher than the results derived by assuming an infinite barrier, for finite barrier height qws where x = 0.3. the mobility first decreases and then flattens out as the barrier confinement increases. the experimental results may be explained with monolayers of asperity height 1-2, and a correlation length of about 33 angstrom. the calculation results are in excellent agreement with the experimental data from alxga1-xas/gaas qws. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-04-11 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/10910]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han XX. A model for scattering due to interface roughness in finite quantum wells[J]. semiconductor science and technology,2005,20(12):1207-1212. |
| APA | Han XX.(2005).A model for scattering due to interface roughness in finite quantum wells.semiconductor science and technology,20(12),1207-1212. |
| MLA | Han XX."A model for scattering due to interface roughness in finite quantum wells".semiconductor science and technology 20.12(2005):1207-1212. |
入库方式： OAI收割
来源：半导体研究所
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