Fabrication of thermo-optic switch in silicon-on-insulator
文献类型:期刊论文
作者 | Wang ZT ; Xia JS ; Fan ZC ; Chen SW ; Yu JZ |
刊名 | chinese physics letters |
出版日期 | 2003 |
卷号 | 20期号:12页码:2185-2187 |
ISSN号 | 0256-307x |
关键词 | silicon-on-insulator |
通讯作者 | wang zt,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
中文摘要 | silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. the switch shows crosstalk of -23.4 db and extinction ratio of 18.1 db in the bar-state. the switching speed is less than 30 mus and the power consumption is about 420 mw the measured excess loss is 1.8 db. these merits make the switch more attractive for applications in wavelength division multiplexing. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11376] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang ZT,Xia JS,Fan ZC,et al. Fabrication of thermo-optic switch in silicon-on-insulator[J]. chinese physics letters,2003,20(12):2185-2187. |
APA | Wang ZT,Xia JS,Fan ZC,Chen SW,&Yu JZ.(2003).Fabrication of thermo-optic switch in silicon-on-insulator.chinese physics letters,20(12),2185-2187. |
MLA | Wang ZT,et al."Fabrication of thermo-optic switch in silicon-on-insulator".chinese physics letters 20.12(2003):2185-2187. |
入库方式: OAI收割
来源:半导体研究所
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