中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of thermo-optic switch in silicon-on-insulator

文献类型:期刊论文

作者Wang ZT ; Xia JS ; Fan ZC ; Chen SW ; Yu JZ
刊名chinese physics letters
出版日期2003
卷号20期号:12页码:2185-2187
ISSN号0256-307x
关键词silicon-on-insulator
通讯作者wang zt,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. the switch shows crosstalk of -23.4 db and extinction ratio of 18.1 db in the bar-state. the switching speed is less than 30 mus and the power consumption is about 420 mw the measured excess loss is 1.8 db. these merits make the switch more attractive for applications in wavelength division multiplexing.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11376]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Wang ZT,Xia JS,Fan ZC,et al. Fabrication of thermo-optic switch in silicon-on-insulator[J]. chinese physics letters,2003,20(12):2185-2187.
APA Wang ZT,Xia JS,Fan ZC,Chen SW,&Yu JZ.(2003).Fabrication of thermo-optic switch in silicon-on-insulator.chinese physics letters,20(12),2185-2187.
MLA Wang ZT,et al."Fabrication of thermo-optic switch in silicon-on-insulator".chinese physics letters 20.12(2003):2185-2187.

入库方式: OAI收割

来源:半导体研究所

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