Annealing and activation of silicon implanted in semi-insulating InP substrates
文献类型：期刊论文
| 作者 | Dong HW ; Zhao YW ; Li JM |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2003 |
| 卷号 | 6期号:4页码:215-218 |
| 关键词 | semi-insulating InP ion implantation silicon annealing activation SI+-IMPLANTATION PHOSPHIDE VAPOR UNDOPED INP FE WAFERS UNIFORMITY PRESSURE |
| ISSN号 | 1369-8001 |
| 通讯作者 | dong hw,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the annealing and activation of silicon implanted in both as-grown fe-doped semi-insulating (si) inp substrate and undoped si inp substrate obtained by annealing high purity conductive inp wafer (wafer-annealed). si implantations were performed at an energy of 500 kev and a dose of 1 x 10(15) cm(-2). following the implantations, rapid thermal annealing (rta) cycles were carried out for 30 s at different temperatures. the results of raman measurements show that for 700degreesc/30s rta, the two si-implanted si inp substrates have acquired a high degree of lattice recovery and electrical activation. however, further hall measurements indicate that the carrier concentration of the wafer-annealed si inp substrate is about three times higher than that of the as-grown fe-doped si inp substrate. the difference can be ascribed to the low fe concentration of the wafer-annealed si inp substrate.these experimental data imply that the use of the wafer-annealed si inp substrate can be conducive to the improvement of inp-based device performances. (c) 2003 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11380]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dong HW,Zhao YW,Li JM. Annealing and activation of silicon implanted in semi-insulating InP substrates[J]. materials science in semiconductor processing,2003,6(4):215-218. |
| APA | Dong HW,Zhao YW,&Li JM.(2003).Annealing and activation of silicon implanted in semi-insulating InP substrates.materials science in semiconductor processing,6(4),215-218. |
| MLA | Dong HW,et al."Annealing and activation of silicon implanted in semi-insulating InP substrates".materials science in semiconductor processing 6.4(2003):215-218. |
入库方式： OAI收割
来源：半导体研究所
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