Silicon doping induced increment of quantum dot density
文献类型：期刊论文
| 作者 | Duan RF
|
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2003 |
| 卷号 | 42期号:10页码:6314-6318 |
| 关键词 | MBE silicon doping density InGaAs/GaAs SAOD INGAAS ISLANDS GAAS |
| ISSN号 | 0021-4922 |
| 通讯作者 | duan rf,chinese acad sci,inst semicond,novel mat dept,beijing 100083,peoples r china. |
| 中文摘要 | low-indium-content self-assembled ingaas/gaas quantum dots (saqd) were grown using solid-source molecular beam epitaxy (mbe) and investigated by atomic force microscopy and photoluminescence (pl) spectroscopy. silicon, which was doped at different quantum dot (qd) growth stages, markedly increased the density of qd. we obtained high density in0.35ga0.65as/gaas(001) quantum dots of 10(11)/cm(2) at a growth temperature of 520degreesc. pl spectra and distribution statistics show the high quality and uniformity of our silicon-doped samples. the density increment can be explained using the lattice-hardening mechanism due to silicon doping. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11384]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan RF. Silicon doping induced increment of quantum dot density[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(10):6314-6318. |
| APA | Duan RF.(2003).Silicon doping induced increment of quantum dot density.japanese journal of applied physics part 1-regular papers short notes & review papers,42(10),6314-6318. |
| MLA | Duan RF."Silicon doping induced increment of quantum dot density".japanese journal of applied physics part 1-regular papers short notes & review papers 42.10(2003):6314-6318. |
入库方式： OAI收割
来源：半导体研究所
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