Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors
文献类型:期刊论文
作者 | Zhang GQ ; Sun P ; Zou Q ; Mei X ; Ruda HE ; Gu Q ; Yu XF ; Ren DY ; Yan RL |
刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
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出版日期 | 2003 |
卷号 | 42期号:10页码:6491-6495 |
关键词 | ionizing radiation dose rate PZT dielectric constant coercive field C-V curves remanent polarization FERROELECTRIC PZT CAPACITORS IONIZING-RADIATION BORDER TRAPS TRANSISTORS DEGRADATION MECHANISMS MEMORIES VOLTAGE DEVICES RAY |
ISSN号 | 0021-4922 |
通讯作者 | zhang gq,univ toronto,ctr adv nanotechnol,170 coll st,toronto,on m5s 3e4,canada. |
中文摘要 | the influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. more severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (c-v) curves occurred with increasing radiation dose at lower dose rates. the electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. the radiation-induced degradation of parameters such as the coercive field drift and distortion of the c-v curve can be recovered partly through post-irradiation annealing. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11386] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang GQ,Sun P,Zou Q,et al. Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(10):6491-6495. |
APA | Zhang GQ.,Sun P.,Zou Q.,Mei X.,Ruda HE.,...&Yan RL.(2003).Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors.japanese journal of applied physics part 1-regular papers short notes & review papers,42(10),6491-6495. |
MLA | Zhang GQ,et al."Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors".japanese journal of applied physics part 1-regular papers short notes & review papers 42.10(2003):6491-6495. |
入库方式: OAI收割
来源:半导体研究所
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