中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors

文献类型:期刊论文

作者Zhang GQ ; Sun P ; Zou Q ; Mei X ; Ruda HE ; Gu Q ; Yu XF ; Ren DY ; Yan RL
刊名japanese journal of applied physics part 1-regular papers short notes & review papers
出版日期2003
卷号42期号:10页码:6491-6495
关键词ionizing radiation dose rate PZT dielectric constant coercive field C-V curves remanent polarization FERROELECTRIC PZT CAPACITORS IONIZING-RADIATION BORDER TRAPS TRANSISTORS DEGRADATION MECHANISMS MEMORIES VOLTAGE DEVICES RAY
ISSN号0021-4922
通讯作者zhang gq,univ toronto,ctr adv nanotechnol,170 coll st,toronto,on m5s 3e4,canada.
中文摘要the influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. more severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (c-v) curves occurred with increasing radiation dose at lower dose rates. the electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. the radiation-induced degradation of parameters such as the coercive field drift and distortion of the c-v curve can be recovered partly through post-irradiation annealing.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11386]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang GQ,Sun P,Zou Q,et al. Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(10):6491-6495.
APA Zhang GQ.,Sun P.,Zou Q.,Mei X.,Ruda HE.,...&Yan RL.(2003).Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors.japanese journal of applied physics part 1-regular papers short notes & review papers,42(10),6491-6495.
MLA Zhang GQ,et al."Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors".japanese journal of applied physics part 1-regular papers short notes & review papers 42.10(2003):6491-6495.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。