Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
文献类型：期刊论文
| 作者 | Zhang SM
|
| 刊名 | science in china series e-technological sciences
 |
| 出版日期 | 2003 |
| 卷号 | 46期号:6页码:620-626 |
| 关键词 | gallium nitride MOCVD in situ laser reflectometry CHEMICAL-VAPOR-DEPOSITION IN-SITU SAPPHIRE SUBSTRATE NUCLEATION LAYERS FILMS |
| ISSN号 | 1006-9321 |
| 通讯作者 | chen j,sichuan univ,dept mat sci,chengdu 610064,peoples r china. |
| 中文摘要 | the influence of growth pressure of gan buffer layer on the properties of mocvd gan on alpha-al2o3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. the results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of gan nuclei. the optical and crystalline quality of gan epilayer was improved when buffer layer was deposited at high pressure. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11388]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SM. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN[J]. science in china series e-technological sciences,2003,46(6):620-626. |
| APA | Zhang SM.(2003).Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN.science in china series e-technological sciences,46(6),620-626. |
| MLA | Zhang SM."Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN".science in china series e-technological sciences 46.6(2003):620-626. |
入库方式： OAI收割
来源：半导体研究所
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