中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure

文献类型:期刊论文

作者Li XZ ; Xia JB
刊名physical review b
出版日期2003
卷号68期号:16页码:art.no.165316
关键词EXCITON-STATES DOTS EMISSION SPHERES
ISSN号1098-0121
通讯作者li xz,chinese ctr adv sci & technol,world lab,pob 8730,beijing 100080,peoples r china.
中文摘要the hamiltonian of wurtzite quantum rods with an ellipsoidal boundary under electric field is given after a coordinate transformation. the electronic structure and optical properties are studied in the framework of the effective-mass envelope-function theory. the quantum-confined stark effect is illustrated by studying the change of the electronic structures under electric field. the transition probabilities between the electron and hole states decrease sharply with the increase of the electric field. the polarization factor increases with the increase of the electric field. effects of the electric field and the shape of the rods on the exciton effect are also investigated. the exciton binding energy decreases with the increase of both the electric field and the aspect ratio. in the end, considering the exciton binding energy, we calculated the band gap variation of size- and shape-controlled colloidal cdse quantum rods, which is in good agreement with experimental results.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11390]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Li XZ,Xia JB. Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure[J]. physical review b,2003,68(16):art.no.165316.
APA Li XZ,&Xia JB.(2003).Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure.physical review b,68(16),art.no.165316.
MLA Li XZ,et al."Effects of electric field on the electronic structure and optical properties of quantum rods with wurtzite structure".physical review b 68.16(2003):art.no.165316.

入库方式: OAI收割

来源:半导体研究所

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