Electron transport properties of MM-HEMT with varied channel indium contents
文献类型：期刊论文
| 作者 | Qiu ZJ ; Jiang CP ; Gui YS ; Shu XZ ; Guo SL ; Chu JH ; Cui LJ ; Zeng YP ; Zhu ZP ; Wang BQ |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:11页码:2879-2882 |
| 关键词 | MM-HEMT Shubnikov-de Hass oscillation MOBILITY TRANSISTORS ALLOY SCATTERING HIGH-PERFORMANCE GAAS |
| ISSN号 | 1000-3290 |
| 通讯作者 | qiu zj,chinese acad sci,shanghai inst tech phys,state key lab infrared phys,shanghai 200083,peoples r china. |
| 中文摘要 | transport properties of two-dimensional electron gas (2deg) are crucial to metamorphic high-electron-mobility transistors (mm-hemt). we have investigated the variations of subband electron mobility and concentration versus temperature from shubnikov-de hass oscillations., and variable temperature hall measurements. the results indicate that the electrical performance is the best when the in content is 0.65 in the channel for mm-hemt. when the in content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11392]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Qiu ZJ,Jiang CP,Gui YS,et al. Electron transport properties of MM-HEMT with varied channel indium contents[J]. acta physica sinica,2003,52(11):2879-2882. |
| APA | Qiu ZJ.,Jiang CP.,Gui YS.,Shu XZ.,Guo SL.,...&Wang BQ.(2003).Electron transport properties of MM-HEMT with varied channel indium contents.acta physica sinica,52(11),2879-2882. |
| MLA | Qiu ZJ,et al."Electron transport properties of MM-HEMT with varied channel indium contents".acta physica sinica 52.11(2003):2879-2882. |
入库方式： OAI收割
来源：半导体研究所
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