Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures
文献类型：期刊论文
| 作者 | Wang LJ ; Zhu MF ; Liu FZ ; Liu JL ; Han YQ |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2003 |
| 卷号 | 52期号:11页码:2934-2938 |
| 关键词 | polycrystalline silicon hot-wire CVD optoelectronic properties AMORPHOUS-SILICON |
| ISSN号 | 1000-3290 |
| 通讯作者 | wang lj,chinese acad sci,dept phys,grad sch,beijing 100039,peoples r china. |
| 中文摘要 | polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( hwcvd) on glass at 250 degreesc with w or ta wire as the catalyzers. the structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with x-c > 90 % ( x-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, r-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) omega(-1) cm(-1), ea(a) approximate to 0.5ev and e-opt less than or equal to 1.3ev. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11394]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang LJ,Zhu MF,Liu FZ,et al. Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures[J]. acta physica sinica,2003,52(11):2934-2938. |
| APA | Wang LJ,Zhu MF,Liu FZ,Liu JL,&Han YQ.(2003).Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures.acta physica sinica,52(11),2934-2938. |
| MLA | Wang LJ,et al."Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures".acta physica sinica 52.11(2003):2934-2938. |
入库方式： OAI收割
来源：半导体研究所
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