Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field
文献类型:期刊论文
作者 | Liu JL ; Li SS ; Niu ZC ; Yang FH ; Feng SL |
刊名 | superlattices and microstructures
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出版日期 | 2003 |
卷号 | 33期号:1-2页码:29-40 |
关键词 | effective-mass approximation adiabatic approximation quantum disks stark effect splitting DOTS EXCITON |
ISSN号 | 0749-6036 |
通讯作者 | liu jl,chinese acad sci,inst semicond,state key lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
中文摘要 | in the framework of the effective-mass and adiabatic approximations, by setting the effective-mass of electron in the quantum disks (qds) different from that in the potential barrier material, we make some improvements in the calculation of the electronic energy levels of vertically stacked self-assembled inas qd. comparing with the results when an empirical value was adopted as the effective-mass of electron of the system, we can see that the higher levels become heightened. furthermore, the stark shifts of the system of different methods are compared. the stark shifts of holes are also studied. the vertical electric field changes the splitting between the symmetric level and the antisymmetric one for the same angular momentum. (c) 2003 elsevier ltd. all rights reserved. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11406] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Liu JL,Li SS,Niu ZC,et al. Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field[J]. superlattices and microstructures,2003,33(1-2):29-40. |
APA | Liu JL,Li SS,Niu ZC,Yang FH,&Feng SL.(2003).Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field.superlattices and microstructures,33(1-2),29-40. |
MLA | Liu JL,et al."Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field".superlattices and microstructures 33.1-2(2003):29-40. |
入库方式: OAI收割
来源:半导体研究所
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