中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field

文献类型:期刊论文

作者Liu JL ; Li SS ; Niu ZC ; Yang FH ; Feng SL
刊名superlattices and microstructures
出版日期2003
卷号33期号:1-2页码:29-40
关键词effective-mass approximation adiabatic approximation quantum disks stark effect splitting DOTS EXCITON
ISSN号0749-6036
通讯作者liu jl,chinese acad sci,inst semicond,state key lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要in the framework of the effective-mass and adiabatic approximations, by setting the effective-mass of electron in the quantum disks (qds) different from that in the potential barrier material, we make some improvements in the calculation of the electronic energy levels of vertically stacked self-assembled inas qd. comparing with the results when an empirical value was adopted as the effective-mass of electron of the system, we can see that the higher levels become heightened. furthermore, the stark shifts of the system of different methods are compared. the stark shifts of holes are also studied. the vertical electric field changes the splitting between the symmetric level and the antisymmetric one for the same angular momentum. (c) 2003 elsevier ltd. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11406]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu JL,Li SS,Niu ZC,et al. Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field[J]. superlattices and microstructures,2003,33(1-2):29-40.
APA Liu JL,Li SS,Niu ZC,Yang FH,&Feng SL.(2003).Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field.superlattices and microstructures,33(1-2),29-40.
MLA Liu JL,et al."Electronic structure of coupled vertically stacked self-assembled InAs quantum disks in a vertical electric field".superlattices and microstructures 33.1-2(2003):29-40.

入库方式: OAI收割

来源:半导体研究所

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