Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
文献类型：期刊论文
| 作者 | Dong ZY ; Zhao YW ; Zeng YP ; Duan ML ; Sun WR ; Jiao JH ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 259期号:1-2页码:1-7 |
| 关键词 | annealing defects etching semiconducting indium phosphide FE-DOPED INP SEMIINSULATING INP INDIUM-PHOSPHIDE DEFECTS DIFFUSION CRYSTALS WAFERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | dong zy,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | microdefects originating from impurity-dislocation interactions in undoped inp that had been annealed in phosphorus and iron phosphide ambiances have been studied using optical microscopy. the electrical uniformity of the annealed wafer is improved by removing impurity aggregation around dislocations and by eliminating impurity striations in the annealing process. compared to as-grown fe-doped semi-insulating (si) material, si wafers obtained by annealing undoped inp in iron phosphide ambiances have better uniformity. this is attributed to the avoidance of fe aggregation around dislocations and dislocation clusters, fe precipitation and impurity striations, and is related to the use of a low concentration of fe in the annealed material. the influence of fe diffusion on the migration of dislocations in the annealing process has been studied and reviewed. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11408]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Dong ZY,Zhao YW,Zeng YP,et al. Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances[J]. journal of crystal growth,2003,259(1-2):1-7. |
| APA | Dong ZY.,Zhao YW.,Zeng YP.,Duan ML.,Sun WR.,...&Lin LY.(2003).Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances.journal of crystal growth,259(1-2),1-7. |
| MLA | Dong ZY,et al."Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances".journal of crystal growth 259.1-2(2003):1-7. |
入库方式： OAI收割
来源：半导体研究所
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