中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
MnSb/porous silicon hybrid structure prepared by physical vapor deposition

文献类型:期刊论文

作者Xiu HX ; Chen NF ; Peng CT
刊名journal of crystal growth
出版日期2003
卷号259期号:1-2页码:110-114
关键词physical vapor deposition processes manganese antimonide porous silicon POROUS-SILICON FILMS MNSB EPITAXY
ISSN号0022-0248
通讯作者xiu hx,chinese acad sci,key lab senicond mat sci,inst semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要mnsb/porous silicon hybrid structure was prepared by physical vapor deposition technique. the structure and surface morphology of the mnsb films were analyzed by x-ray diffraction and scanning electron microscope, respectively. the magnetic hysteresis loops were obtained by an alternative gradient magnetometer. based on the measurements, only mnsb phase was found and the surface morphology was rough and island-like. mnsb thin films show ferromagnetism at room temperature. (c) 2003 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11410]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Xiu HX,Chen NF,Peng CT. MnSb/porous silicon hybrid structure prepared by physical vapor deposition[J]. journal of crystal growth,2003,259(1-2):110-114.
APA Xiu HX,Chen NF,&Peng CT.(2003).MnSb/porous silicon hybrid structure prepared by physical vapor deposition.journal of crystal growth,259(1-2),110-114.
MLA Xiu HX,et al."MnSb/porous silicon hybrid structure prepared by physical vapor deposition".journal of crystal growth 259.1-2(2003):110-114.

入库方式: OAI收割

来源:半导体研究所

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