Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film
文献类型：期刊论文
| 作者 | Chen CY ; Chen WD ; Song SF ; Xu ZJ ; Liao XB ; Li GH ; Ding K |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 94期号:9页码:5599-5604 |
| 关键词 | THIN-FILMS SI NANOPARTICLES PHOTOLUMINESCENCE NANOCRYSTALS EXCITATION LUMINESCENCE SIO2-FILMS OXYGEN BOND |
| ISSN号 | 0021-8979 |
| 通讯作者 | chen cy,chinese acad sci,inst semicond,state key lab surface phys,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the erbium-doped hydrogenated amorphous silicon suboxide films containing amorphous silicon clusters were prepared. the samples exhibited photoluminescence peaks at around 750 nm and 1.54 mum, which could be assigned to the electron-hole recombination in amorphous silicon clusters and the intra-4f transition in er3+, respectively. correlations between the intensities of these two photoluminescence peaks and oxidation and dehydrogenation of the films during annealing were studied. it was found that the oxidation is triggered by dehydrogenation of the films even at low annealing temperatures, which decisively changes the intensities of the two photoluminescence peaks. on the other hand, the increase of er content in the erbium-doped hydrogenated amorphous silicon suboxide film will enhance er3+ emission at 1.54 mum, while quench amorphous silicon cluster emission at 750 nm, such a competitive relationship, was also observed in the erbium-doped silicon nanocrystals embedded in sio2 matrix. moreover, we found that er3+ emission is not sensitive to whether silicon clusters are crystalline or amorphous. the amorphous silicon clusters can be as sensitizer on er3+ emission as that of silicon nanocrystals. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11412]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen CY,Chen WD,Song SF,et al. Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film[J]. journal of applied physics,2003,94(9):5599-5604. |
| APA | Chen CY.,Chen WD.,Song SF.,Xu ZJ.,Liao XB.,...&Ding K.(2003).Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film.journal of applied physics,94(9),5599-5604. |
| MLA | Chen CY,et al."Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film".journal of applied physics 94.9(2003):5599-5604. |
入库方式： OAI收割
来源：半导体研究所
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