Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber
文献类型：期刊论文
| 作者 | Zhang QL ; Feng BH ; Zhang DX ; Fu PM ; Zhang ZG ; Zhao ZW ; Deng PZ ; Jun X ; Xu XD ; Wang YG ; Ma XY |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:10页码:1741-1743 |
| 关键词 | TRANSIENT ENERGY-TRANSFER |
| ISSN号 | 0256-307x |
| 通讯作者 | zhang ql,chinese acad sci,inst phys,lab opt phys,beijing 100080,peoples r china. |
| 中文摘要 | a passively q-switched yb: yag microchip laser has been constructed by using a doped gaas as the saturable absorber as well as the output coupler. at 13.5 w of pump power the device produces high-quality 3.4 muj 52 ns pulses at 1030nm with a pulse repetition rate of 7.8khz in a tem00-mode. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11418]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang QL,Feng BH,Zhang DX,et al. Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber[J]. chinese physics letters,2003,20(10):1741-1743. |
| APA | Zhang QL.,Feng BH.,Zhang DX.,Fu PM.,Zhang ZG.,...&Ma XY.(2003).Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber.chinese physics letters,20(10),1741-1743. |
| MLA | Zhang QL,et al."Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber".chinese physics letters 20.10(2003):1741-1743. |
入库方式： OAI收割
来源：半导体研究所
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