Selectively excited photoluminescence of GaAs1-xNx single quantum wells
文献类型：期刊论文
| 作者 | Tan PH
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 94期号:8页码:4863-4865 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAASN ALLOYS NITROGEN LUMINESCENCE PRESSURE STATES ENERGY |
| ISSN号 | 0021-8979 |
| 通讯作者 | tan ph,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | gaasn bulk and gaasn/gaas single quantum wells grown by molecular beam epitaxy are studied by selectively excited photoluminescence (pl) measurements. a significant difference is observed in the pl spectra when the excitation energy is set below or above the band gap of gaas for the gaasn/gaas quantum well samples, while the spectral features of gaasn bulk are not sensitive to the excitation energy. the observed difference in pl of the gaasn/gaas quantum well samples is attributed to the exciton localization effect at the gaasn/gaas interfaces, which is directly correlated with the transfer and trap processes of the photogenerated carriers from gaas into gaasn through the heterointerfaces. this interface-related exciton localization effect can be greatly reduced by a rapid thermal annealing process, making the pl be dominated by the intrinsic delocalized transition in gaasn/gaas. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11428]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tan PH. Selectively excited photoluminescence of GaAs1-xNx single quantum wells[J]. journal of applied physics,2003,94(8):4863-4865. |
| APA | Tan PH.(2003).Selectively excited photoluminescence of GaAs1-xNx single quantum wells.journal of applied physics,94(8),4863-4865. |
| MLA | Tan PH."Selectively excited photoluminescence of GaAs1-xNx single quantum wells".journal of applied physics 94.8(2003):4863-4865. |
入库方式： OAI收割
来源：半导体研究所
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