Size evolution and optical properties of self-assembled InAs quantum dots on different matrix
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2003 |
| 卷号 | 19期号:3页码:292-297 |
| 关键词 | self-assembled MBE quantum dots photoluminescence 1.3 MU-M TEMPERATURE-DEPENDENCE EXCITED-STATES INXGA1-XAS LASERS INP |
| ISSN号 | 1386-9477 |
| 通讯作者 | he j,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | inas quantum dots have been grown by solid source molecular beam epitaxy on different matrix to investigate the effect on the structure and optical properties. high density of 1.02 x 10(11) cm(-2) of inas islands on in0.15ga0.85as and in0.15al0.85as underlying layer has been achieved. atomic force microscopy and photoluminescence spectra show the size evolution of inas islands on in0.15ga0.85as underlying layer. a strong 1.3 mum photoluminescence from inas islands on in0.15ga0.85as underlying layer and with ingaas strain-reduced layer has been obtained. single-mirror light emitting diode structures with inas quantum dots capped by ingaas grown on ingaas layer as active layer were fabricated and the corresponding radiative efficiency was deduced to be as high as 20.5%. our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11438]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Size evolution and optical properties of self-assembled InAs quantum dots on different matrix[J]. physica e-low-dimensional systems & nanostructures,2003,19(3):292-297. |
| APA | Xu B.(2003).Size evolution and optical properties of self-assembled InAs quantum dots on different matrix.physica e-low-dimensional systems & nanostructures,19(3),292-297. |
| MLA | Xu B."Size evolution and optical properties of self-assembled InAs quantum dots on different matrix".physica e-low-dimensional systems & nanostructures 19.3(2003):292-297. |
入库方式： OAI收割
来源：半导体研究所
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