Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate
文献类型：期刊论文
| 作者 | Li DB
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 257期号:3-4页码:321-325 |
| 关键词 | substrate heteroepitaxy low pressure chemical vapor deposition semiconducting silicon carbide COMPLIANT SUBSTRATE CRITICAL THICKNESS SILICON RELAXATION MECHANISM DEFECTS LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang zc,chinese acad sci,lab semicond mat sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the hydrogen-implanted si substrate has been used for the fabrication of the "compliant substrate", which can accommodate the mismatch strain during the heteroepitaxy. the compliance of the substrate can be modulated by the energy and dose of implanted hydrogen. in addition, the defects caused by implantation act as the gettering center for the internal gettering of the harmful metallic impurities. compared with sic films growth on substrate without implantation. all the measurements indicated that the mismatch strains in the sic films grown on this substrate have been released and the crystalline qualities have been improved. it is a practical technique used for the compliant substrate fabrication and compatible with the semiconductor industry. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11444]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DB. Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate[J]. journal of crystal growth,2003,257(3-4):321-325. |
| APA | Li DB.(2003).Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate.journal of crystal growth,257(3-4),321-325. |
| MLA | Li DB."Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate".journal of crystal growth 257.3-4(2003):321-325. |
入库方式： OAI收割
来源：半导体研究所
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