Photoluminescence behaviors from stoichiometric gadolinium oxide films
文献类型：期刊论文
| 作者 | Zhou JP ; Chai CL ; Yang SY ; Liu ZK ; Song SL ; Chen NF ; Lin LY |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2003 |
| 卷号 | 94期号:7页码:4414-4419 |
| 关键词 | INTERFACIAL LAYER FORMATION GATE DIELECTRICS GD2O3 ION-BEAM TEMPERATURE-DEPENDENCE SILICON SI GAAS(100) CONSTANTS EUROPIUM YTTRIUM |
| ISSN号 | 0021-8979 |
| 通讯作者 | zhou jp,chinese acad sci,inst semicond,key lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | stoichiometric gadolinium oxide thin films have been grown on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. gadolinium oxide shares gd2o3 structures although the ratio of gadolinium and oxygen in the film is about 2:1 and a lot of oxygen deficiencies exist. photoluminescence (pl) measurements have been carried out within a temperature range of 5-300 k. the detailed characters of the pl emission integrated intensity, peak position, and peak width at different temperature were reported and an anomalous photoluminescence behavior was observed. the character of pl emission integrated intensity is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. four peaks relative to alpha band and beta band were observed also. therefore we suggest that the nanoclusters with the oxygen deficiencies contribute to the pl emission and the model of singlet-triplet exchange splitting of exciton was employed for discussion. (c) 2003 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11448]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou JP,Chai CL,Yang SY,et al. Photoluminescence behaviors from stoichiometric gadolinium oxide films[J]. journal of applied physics,2003,94(7):4414-4419. |
| APA | Zhou JP.,Chai CL.,Yang SY.,Liu ZK.,Song SL.,...&Lin LY.(2003).Photoluminescence behaviors from stoichiometric gadolinium oxide films.journal of applied physics,94(7),4414-4419. |
| MLA | Zhou JP,et al."Photoluminescence behaviors from stoichiometric gadolinium oxide films".journal of applied physics 94.7(2003):4414-4419. |
入库方式： OAI收割
来源：半导体研究所
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