Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2003 |
| 卷号 | 15期号:10页码:1336-1338 |
| 关键词 | band structure differential gain GaInNAs optical gain strain compensated strain mediated STRAIN TEMPERATURE DIODES ALLOYS OFFSET |
| ISSN号 | 1041-1135 |
| 通讯作者 | zhang w,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | based on the band-anticrossing model, the effect of the strain-compensated layer and the strain-mediated layer on the band structure, the gain, and the differential gain of gainnas-gaas quantum well lasers have been investigated. different band-filling mechanisms have been illustrated. compared to the gainnas-gaas single quantum well with the same wavelength,, the introduction. (if the strain-compensated layer and the strain-mediated layer increases the transparency carrier density. however, these multilayer structures help to suppress the degradation of the differential gain. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11450]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers[J]. ieee photonics technology letters,2003,15(10):1336-1338. |
| APA | Xu YQ.(2003).Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers.ieee photonics technology letters,15(10),1336-1338. |
| MLA | Xu YQ."Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers".ieee photonics technology letters 15.10(2003):1336-1338. |
入库方式： OAI收割
来源：半导体研究所
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