Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance
文献类型：期刊论文
| 作者 | Jin P
|
| 刊名 | applied surface science
 |
| 出版日期 | 2003 |
| 卷号 | 218期号:1-4页码:210-214 |
| 关键词 | sulfur passivation Franz-Keldysh oscillations undoped-n(+) type GaAs complex Fourier transformation FRANZ-KELDYSH OSCILLATIONS GAAS(001) SURFACES GAAS(100) PHOTOEMISSION SPECTROSCOPY ENHANCEMENT |
| ISSN号 | 0169-4332 |
| 通讯作者 | jin p,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | photoreflectance (pr) has been used to study surface electronic properties (electric field, fermi level pinning, and density of surface states) of undoped-n(+) (un+) gaas treated in the solution of ammonium sulfide in isopropanol. complex fourier transformation (cft) of pr spectra from passivated surface shows that the sulfur overlay on gaas surface makes no contribution to franz-keldysh oscillations (fkos). the barrier height measured by pr is derived from surface states directly, rather than the total barrier height, which includes the potentials derived from ga-s and as-s dipole layers. comparing with native oxidated surface, the passivation leads to 80 mev movement of surface fermi level towards the conduction band minimum, and reduction by more than one order in density of surface states. (c) 2003 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11452]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P. Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance[J]. applied surface science,2003,218(1-4):210-214. |
| APA | Jin P.(2003).Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance.applied surface science,218(1-4),210-214. |
| MLA | Jin P."Electronic properties of sulfur passivated undoped-n(+) type GaAs surface studied by photoreflectance".applied surface science 218.1-4(2003):210-214. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。