Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Gong Z ; Fang ZD ; Xu XH ; Miao ZH ; Niu ZC ; Feng SL |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2003 |
| 卷号 | 15期号:31页码:5383-5388 |
| 关键词 | 1.35 MU-M ISLANDS PHOTOLUMINESCENCE |
| ISSN号 | 0953-8984 |
| 通讯作者 | gong z,chinese acad sci,inst semicond,natl lab superlattice & micorstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have investigated the effect of different cap layers on the photoluminescence (pl) of self-assembled inas/gaas quantum dots (qds). based upon different cap layers, the wavelength of inas qds can be tuned to the range from 1.3 to 1.5 mum. an inalas and ingaas combination layer can enlarge the energy separation between the ground and first excited radiative transition. gaas/inas short period superlattices (sls) make the emission wavelength shift to 1.53 mum. the pl intensity of inas qds capped with gaas/inas sls shows an anomalous increase with increasing temperature. we attribute this to the transfer of carriers between different qds. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11460]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gong Z,Fang ZD,Xu XH,et al. Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots[J]. journal of physics-condensed matter,2003,15(31):5383-5388. |
| APA | Gong Z,Fang ZD,Xu XH,Miao ZH,Niu ZC,&Feng SL.(2003).Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots.journal of physics-condensed matter,15(31),5383-5388. |
| MLA | Gong Z,et al."Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots".journal of physics-condensed matter 15.31(2003):5383-5388. |
入库方式： OAI收割
来源：半导体研究所
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