中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure

文献类型:期刊论文

作者Yan QF ; Yu JZ
刊名japanese journal of applied physics part 1-regular papers short notes & review papers
出版日期2003
卷号42期号:7a页码:4361-4362
关键词electrooptical switch silicon-on-insulator modulation area structure plasma dispersion effect integrated opotoelectronics WAVE-GUIDE DEVICES
ISSN号0021-4922
通讯作者yan qf,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要this paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (soi). a two-dimensional (2d) semiconductor device simulation tool pisces-ii has been used to analyze the dc and transient behaviors of the two devices. the modeling results show that the switch with an n+-i-p+-i-n+ modulation structure has a much faster response speed than the device with a p+-i-n+ modulation structure, although the former requires slightly stronger injection power.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/11472]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Yan QF,Yu JZ. Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(7a):4361-4362.
APA Yan QF,&Yu JZ.(2003).Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure.japanese journal of applied physics part 1-regular papers short notes & review papers,42(7a),4361-4362.
MLA Yan QF,et al."Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure".japanese journal of applied physics part 1-regular papers short notes & review papers 42.7a(2003):4361-4362.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。