Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure
文献类型:期刊论文
作者 | Yan QF ; Yu JZ |
刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
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出版日期 | 2003 |
卷号 | 42期号:7a页码:4361-4362 |
关键词 | electrooptical switch silicon-on-insulator modulation area structure plasma dispersion effect integrated opotoelectronics WAVE-GUIDE DEVICES |
ISSN号 | 0021-4922 |
通讯作者 | yan qf,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
中文摘要 | this paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (soi). a two-dimensional (2d) semiconductor device simulation tool pisces-ii has been used to analyze the dc and transient behaviors of the two devices. the modeling results show that the switch with an n+-i-p+-i-n+ modulation structure has a much faster response speed than the device with a p+-i-n+ modulation structure, although the former requires slightly stronger injection power. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/11472] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Yan QF,Yu JZ. Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2003,42(7a):4361-4362. |
APA | Yan QF,&Yu JZ.(2003).Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure.japanese journal of applied physics part 1-regular papers short notes & review papers,42(7a),4361-4362. |
MLA | Yan QF,et al."Improving response speed of electrooptical switch in silicon-on-insulator by modifying modulation area structure".japanese journal of applied physics part 1-regular papers short notes & review papers 42.7a(2003):4361-4362. |
入库方式: OAI收割
来源:半导体研究所
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