Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:8页码:1261-1263 |
| 关键词 | GAINNAS LUMINESCENCE DIODES ALLOYS |
| ISSN号 | 0256-307x |
| 通讯作者 | zhang w,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of gainnas/gaas quantum well lasers have been investigated. the results show that the ganas barrier has a disadvantage in increasing the density of states in the conduction band. meanwhile, the multilayer quantum wells need higher transparency carrier density than the gainnas/gaas single quantum well with the same wavelength. however, they help to suppress the degradation of the differential gain. the calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11476]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers[J]. chinese physics letters,2003,20(8):1261-1263. |
| APA | Xu YQ.(2003).Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers.chinese physics letters,20(8),1261-1263. |
| MLA | Xu YQ."Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers".chinese physics letters 20.8(2003):1261-1263. |
入库方式： OAI收割
来源：半导体研究所
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