Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
文献类型：期刊论文
| 作者 | Zhang SM
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2003 |
| 卷号 | 256期号:3-4页码:248-253 |
| 关键词 | in situ laser reflectometry lateral overgrowths surface morphology metalorganic chemical vapor deposition GaN CHEMICAL-VAPOR-DEPOSITION LIGHT-EMITTING-DIODES SAPPHIRE SUBSTRATE NUCLEATION LAYERS QUALITY TEMPERATURE |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen j,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the morphological evolution of gan thin films grown on sapphire by metalorganic chemical vapor deposition was demonstrated to depend strongly on the growth pressure of gan nucleation layer (nl). for the commonly used two-step growth process, a change in deposition pressure of nl greatly influences the growth mode and morphological evolution of the following gan epitaxy. by means of atomic force microscopy and scanning electron microscope, it is shown that the initial density and the spacing of nucleation sites on the nl and subsequently the growth mode of fit gan epilayer may be directly controlled by tailoring the initial low temperature nl growth pressure. a mode is proposed to explain the td reduction for nl grown at relatively high reactor pressure. (c) 2003 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/11482]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SM. Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD[J]. journal of crystal growth,2003,256(3-4):248-253. |
| APA | Zhang SM.(2003).Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD.journal of crystal growth,256(3-4),248-253. |
| MLA | Zhang SM."Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD".journal of crystal growth 256.3-4(2003):248-253. |
入库方式： OAI收割
来源：半导体研究所
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